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丁召老师个人简介
  返回威尼斯在线平台主页   发布时间: 2014-08-11 浏览次数: 6769

  

姓名:丁 召

职称学位:教授、博士

研究方向:低维半导体材料、半导体器件

办公地点:威尼斯在线平台大数据与信息工程学院

联系方式:

  

教育经历:

University of Arkansas, ArkansasU. S. A.

物理学博士, 19988月-20028,导师:Paul M. Thibado

  

University of Arkansas, Arkansas, U. S. A.

应用物理硕士,19988月-20015, 导师:Paul M. Thibado

  

武汉大学中国武汉

物理学硕士, 19878月-19908, 导师:熊传铭

  

武汉大学中国武汉

理学学士, 19819月-19858

职业经历:

博士后研究助理:20028月-20058月,Department of Physics, University of Arkansas, Arkansas, U. S. A. 指导教授:Paul M. Thibado

  

博士生:19988月-20028月,Department of Physics, University of Arkansas, Arkansas, U. S. A. 指导教授:Paul M. Thibado

  

硕士生:19988月-20015月,Department of Physics, University of Arkansas, Arkansas, U. S. A. 指导教授:Paul M. Thibado

  

访问学者:19979月-19985月,Department of Physics, University of Arkansas, Arkansas, U. S. A. 指导教授:Paul M. Thibado

  

硕士生:19878月-19908月,武汉大学物理系,半导体物理与半导体器件物理专业

指导教授:熊传铭

  

教师:威尼斯在线平台,1985年-1987

讲师:威尼斯在线平台,1990年-1997

教授:威尼斯在线平台,2003年-

主持的科研项目:

1.2006年获贵州省委组织部高层次人才科研条件特助经费项目:GaAs表面预粗糙化与粗糙化过程的研究(TZJF200610号),经费5万元

2.2007年获贵州省科技厅基金项目:GaAs表面相变过程的MBE/STM研究(黔科合J字【20072176号),经费3万元

3.2008年获国家自然科学基金:InGaAs表面相变过程的MBE/STM研究(60866001),经费31万元

4.2008年获贵州省科技厅工业攻关项目:高精度低漂移集成电压基准源研究与试制(黔科合GY字(20083033),经费15万元

5.2010年获教育部博士点基金:间歇式源中断方式生长InGaAs量子点的表面形貌研究,经费6万元

6.2012年获贵州省教育厅项目:贵州省电子元器件产学研基地(黔教合KY字【2012029号),经费10万元

7.2016年获国家自然科学基金:三维有序量子点的可控制备、结构表征与物性(61564002),直接经费45万元

丁召教授2005年回国,2006年担任贵州省微纳电子与软件技术重点实验室副主任,2007年主持该重点实验室的建成验收以及2012年、2015年的评估审核。2010年主持电子科学系电子科学与技术一级学科博士点申报工作,2011年获得教育部批准。2012年作为主要成员参与申报电子科学与技术一级学科博士后流动站工作,2013年获得国家人社部批准。2013年主持半导体功率器件可靠性教育部工程技术中心申报,2014年获得教育部批准建设,2018年通过验收。

近期发表的论文:

  

1.王一, 杨晨, 郭祥, 王继红, 刘雪飞, 魏节敏, 郎啟智, 罗子江, 丁召, Al0.17Ga0.83As/GaAs(001) 薄膜退火过程的热力学分析, 物理学报, 67(8) 080503 2018(SCI)

  

2.XueFei Liu, ZiJiang Luo, Xun Zhou, JieMin Weid, Yi Wang, Xiang Guo, QiZhi Lang, Zhao Ding, Calculation of electronic and optical properties of surface InxGa1?xP and indium-gradient structure on GaP (0 0 1), Computational Materials Science, 153 356 (2018) (SCI)

  

3.XueFei Liu, Zhao Ding, ZiJiang Luo, Xun Zhou, JieMin Wei, Yi Wang, Xiang Guo, QiZhi Lang, Theoretical study on the electronic and optical properties of bulk and surface (001) InxGa1-xAs, Physica B: Condensed Matter, 537 68 (2018) (SCI)

  

4.刘雪飞, 罗子江, , 王继红, 魏杰敏, , , 郎啟智, 刘万松, , 不同In 组分对Inx Ga-x As 物理性质影响的研究, 功能材料, 49(5) 05145 (2018)

  

5.许筱晓, 郭 祥, 王 一, 罗子江, 杨 晨, 杨晓珊, 张之桓, 刘 健, 丁 召, 衬底温度及退火对液滴外延法生长InAs量子点的影响, 功能材料,49303023 2018

  

6.杨晓珊, 郭祥, 罗子江, 王一, 杨晨, 许筱晓, 张之桓, 丁召, 粗糙GaAs(001)表面对In0.15Ga0.85As薄膜生长的影响, 电子科技, 31(4) 1-4 (2018)

  

7.张之桓, 丁召, 王一, 郭祥, 罗子江, 杨晨, 杨晓珊, 许筱晓, AlGaAs插入层对InAs/AlGaAs/GaAs量子点的尺寸分布影响, 威尼斯在线平台学报(自然科学版), 35(3) 39 (2018)

  

8.王继红, 罗子江, 周 勋, 丁 召, 间歇式As中断生长InGaAs/GaAs量子点[J], 功能材料, 48(5) 05023 (2017)

  

9.Yi Wang,Wen-zhe Wei,Chen Yang,Xiang Guo,Zhen Zhao, Hai-yue Zhou,Zi-Jang Luo,Ming-zhe Hu, Zhao Ding, Research on the surface morphology of AlxGa12xAs in molecular beam epitaxy, Appl. Phys. A, 122 190 (2016) (SCI)

  

10.周海月,赵振,郭祥,魏文喆,王一,罗子江,刘健,王继红,丁召, Al0.26Ga0.74As/GaAs(001)表面形貌的热力学分析[J]. 真空科学与技术学报. 36(4) 477 (2016) (EI)

  

11.Mingzhe Hu, Gang Xiong and Zhao Ding*Microwave property improvement of Ca[(Li1/3Nb2/3)0.95Zr0.15]O3+δperovskite by A-site substitution, Modern Physics Letters B, 30(10), 1650123 (2016) (SCI)

  

12.Mingzhe Hu, Zhao Ding*, Gang Xiong, Denghui Ji and Kesheng Zhang, Sintering behavior and dielectric properties of Bi3+-substituted Nd(Zn0:5Ti0:5)O3 microwave ceramics, Modern Physics Letters B, 29( 35, 36) 1550233 (2015) (SCI)

  

13.周海月,赵振,郭祥,魏文喆,王一,黄梦雅,罗子江,丁召, In0.53Ga0.47AsInP001)薄膜表面重构的研究, 材料导报, 29((9) 552015(核心)

  

14.郭祥, 王一, 魏文喆, 黄梦雅, 赵振, 王继红, 胡明哲, 丁召,不同应力下的In_xGa_(1-x)As薄膜表面形貌, 材料导报, 29(1), 21 (2015) (核心)

  

15.赵振,周海月,郭祥,罗子江,王继红,王一,魏文喆,丁召, InAs 沉积量对InAs /GaAs 量子点表面形貌的影响, 功能材料, 46(23) 230252015(EI)

  

16.Wenzhe Wei, Yi Wang, Xiang Guo, Zijiang Luo, Zhen Zhao, Haiyue Zhou,Zhao Ding, Influence of annealing condition and multicycle AlGaAs/GaAsstructures on the Al0.26Ga0.74As surface morphology Applied Surface Science, 345 400 (2015) (SCI)

  

17.周勋,罗子江,王继红,郭祥,丁召, As压退火对GaAs(001)表面形貌与重构的影响, 物理学报,64(21) 216803 (2015) (SCI)

  

18.赵振,周海月,郭祥,罗子江,丁召, 扫描隧道显微镜探针的制备与修饰的方法研究, 威尼斯在线平台学报(自然科学版) 32(4) 462015)

  

19.龚红, 马奎, 傅兴华, 丁召, 杨发顺, 一种超结高压肖特基势垒二极管, 半导体技术, 39, 666 (2014)

  

20.Guo Xiang, Zhou Xun, Wang Ji-Hong, Luo Zi-Jiang, Zhou Qing, Liu Ke, Hu Ming-Zhe, Ding Zhao, Critical surface phase of alpha 2(2 x 4) reconstructed zig-zag chains on InAs(001), Thin Solid Films, 562, 326 (2014), (SCI)

  

21.Liu Ke, Guo Xiang, Zhou Qing, Zhang Bi-Chan, Luo Zi-Jiang, Ding Zhao, An application of half-terrace model to surface ripening of non-bulk GaAs layers, Chinese Physics B, 23, 046806 (2014), (SCI)

  

22.王一, 郭祥, 刘珂, 黄梦雅, 魏文喆, 赵振, 胡明哲, 罗子江, 丁召, 生长厚度对InGaAs/InAs薄膜表面形貌的影响, 真空科学与技术学报, 34, 363 (2014), (EI)

  

23.罗子江, 周勋, 王继红, 郭祥, 丁召, GaAs(001)-(2×4)重构下的表面形貌, 真空科学与技术学报, 34, 426 (2014), (EI)

  

24.罗子江, 周勋, 王继红, 郭祥, 丁召, GaAs(001)表面预粗糙化过程中的临界减慢, 功能材料, 45, 11105 (2014), (EI)

  

25.王一, 黄梦雅, 魏文喆, 丁召, 恒力场下粒子一维运动问题的求解, 大学物理, 33, 22 (2014),

  

26.张智勇, 杨晨, 郭祥, 丁召, 基于FPGA的量子点波形VGA显示与标记方法研究, 现代电子技术, 37, 101 (2014),

  

27.陈睿, 丁召, 杨发顺, 鲁冬梅, 一种高精度曲率补偿带隙基准电压源设计, 现代电子技术, 37, 140 (2014),

  

28.黄梦雅, 丁召, 胡明哲, UWB天线的宽带化技术及其发展, 电讯技术, 54, 236 (2014),

  

29.丁晴, 杨晨, 丁召, 秦鲁东, SVNVerilog HDL开发过程中的应用, 电子设计工程, 22, 17 (2014),

  

30.罗子江, 周勋, 王继红, 郭祥, 王一, 魏文喆, 丁召,GaAs001)薄膜表面形貌相变过程, 功能材料, 45, 9088 (2014), (EI)

  

31.罗子江, 周勋, 王继红, 郭祥, 丁召,GaAs(001)表面重构, 材料导报, 28, 15 (2014),

  

32.张智勇, 杨晨, 刘海桥, 刘林, 张筱松, 丁召, 基于FPGA的红外图像处理算法的测试系统, 激光与红外, 44 , 829 (2014),

  

33.刘海桥, 刘林, 张志勇, 张筱松, 杨晨, 丁召, 基于ARM11嵌入式远程监控系统的分析与设计, 电子设计工程, 22, 181 (2014),

  

34.刘林, 杨晨, 丁召, 基于嵌入式的智能火灾监测报警系统的设计, 电子设计工程, 22, 184 (2014),

  

35.Hu, Mingzhe, Mu, Kaijun, Ding, Zhao, Xiong, Gang, Sintering behavior and THz absorption properties of B2O 3 doped Ca[(Li1/3Nb2/3)0.95Zr 0.15]O3 ceramics, 8th International Conference on High-Performance Ceramics, 2014, CICC 2013, 2013/11/4-2013/11/7, pp 960-965, Chongqing, China

  

36.罗子江, 周勋, 王继红, 郭祥, 张毕禅, 周清, 刘珂, 丁召, InGaAs薄膜表面的粗糙化过程, 物理学报, 62, 036802 (2013), (SCI)

  

37.徐杜功, 丁召, 刘桥, 基于稀疏表达和改进的LBP算子的人脸表情识别, 计算机应用与软件, 30, 246 (2013),

  

38.Zhou Qing, Luo Zijiang, Liu Ke, Guo Xiang, Zhang Bichan, Zhou Xun, Wang Jihong, Ding Zhao, Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers, Applied Surface Science, 268,151 (2013), (SCI)

  

39.Liu Ke, Zhou Qing, Zhou Xun, Guo Xiang, Luo Zi-Jiang, Wang Ji-Hong, Hu Ming-Zhe, Ding Zhao, Ripening of single-layer InGaAs islands on GaAs (001), Chinese Physics B, 22, 026801 (2013), (SCI)

  

40.王继红, 罗子江, 周勋, 郭祥, 周清, 刘珂, 丁召, MBE生长GaAs(001)薄膜表面的Ostwald熟化过程研究, 功能材料, 44, 847 (2013), (EI)

  

41.王继红, 罗子江, 周勋, 郭祥, 周清, 刘珂, 丁召, RHEED衍射花样与晶体表面形貌的关联性研究, 威尼斯在线平台学报(自然科学版), 30, 73 (2013),

  

42.王继红, 罗子江, 周勋, 张毕禅, 郭祥, 丁召, InAs薄膜的分子束外延生长与表面形貌及表面重构分析, 材料导报, 27, 90 (2013),

  

43.刘雪飞, 丁召, 郝红蕾, 程刚, 刘娇, 杨发顺, 一种降压型DC-DC变换器动态斜坡补偿电路的设计, 微电子学, 43, 206 (2013),

  

44.郭祥, 周勋, 罗子江, 王继红, 周清, 刘珂, 丁召, InAs(001)吸附表面的不可逆重构相变研究, 真空科学与技术学报, 33, 1266 (2013), (EI)

  

45.魏文喆, 郭祥, 刘珂, 王一, 罗子江, 周清, 王继红, 丁召, InAs(001)表面脱氧动力学分析, 物理学报62, 226801 (2013), (SCI)

  

46.贾鹏, 丁召, 杨发顺, 2阶温度补偿的多输出带隙基准电压源, 现代电子技术, 36, 156 (2013),

  

47.罗子江, 周勋, 郭祥, 王继红, 魏文喆, 王一, 丁召, In组分InGaAs薄膜的分子束外延生长及其表面分析, 材料导报, 27, 29 (2013),

  

48.周清, 刘珂, 罗子江, 郭祥, 周勋, 丁召, MBE生长InGaAs/GaAs(001)多层矩阵式量子点, 功能材料, 44, 1128 (2013), (EI)

  

49.Zhang Bi-Chan, Zhou Xun, Luo Zi-Jiang, Guo Xiang, Ding Zhao, Step instability of the In0.2Ga0.8As (001) surface during annealing, Chinese Physics B, 21, 048101 (2012), (SCI)

  

50.Zhou Xun, Luo Zi-Jiang, Guo Xiang, Zhang Bi-Chan, Shang Lin-Tao, Zhou Qing, Deng Chao-Yong, Ding Zhao, Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns, Chinese Physics B, 21, 046103 (2012), (SCI)

  

51.杨法明, 杨发顺, 丁召, 傅兴华, 邓朝勇, 高压超结VDMOS结构设计, 固体电子学研究与进展, 32, 298 (2012),

  

52.尚林涛, 周勋, 罗子江, 张毕禅, 郭祥, 丁召, InAs(001)表面金属化的转变, 材料导报, 26, 101 (2012),

  

53.尚林涛, 罗子江, 周勋, 郭祥, 张毕禅, 何浩, 贺业全, 丁召, In0.14Ga0.86As/GaAs(4×3)表面的RHEEDSTM分析, 真空科学与技术学报, 32, 256 (2012), (EI)

  

54.Liang, Bei, Ma, Kui, Ding, Zhao, Fu, Xinghua, The structure design of MOS current mode logic adder, 2012 International Conference on Microwave and Millimeter Wave Technology, 2012, ICMMT 2012, 2012/5/5-2012/5/8, pp 1396-1399, Shenzhen, China

  

55.罗子江, 周勋, 贺业全, 何浩, 郭祥, 张毕禅, 邓朝勇, 丁召, RHEED实时监控下MBE生长不同In组分的InGaAs薄膜, 功能材料, 42, 2107 (2011), (EI)

  

56.马凯英, 徐慧, 周勋, 丁召, 邓朝勇, 掺稀土钡镁铝酸盐中的能量传递研究, 威尼斯在线平台学报(自然科学版), 28, 24 (2011)

  

57.罗子江, 周勋, 杨再荣, 贺业全, 何浩, 邓朝勇, 丁召, InGaAs/GaAs异质薄膜的MBE生长研究, 功能材料, 42, 846 (2011), (EI)

  

58.徐慧, 马凯英, 张荣芬, 李绪诚, 丁召, 邓朝勇, BaO-MgO二元系相图优化计算研究, 金属热处理, 36, 116 (2011),

  

59.钟智毅, 杨发顺, 丁召, 一种低电压高精度带隙基准电压源设计, 中国集成电路, (03) 31 (2011),

  

60.何浩, 贺业全, 杨再荣, 罗子江, 周勋, 丁召, 自组织InAs/GaAsInGaAs/GaAs量子点生长及退火情况的比较, 真空, 48, 82 (2011),

  

61.郭祥, 罗子江, 张毕禅, 尚林涛, 周勋, 邓朝勇, 丁召, 测定GaAs(001)衬底上InAs的生长速率, 物理实验, 31, 11 (2011),

  

62.周勋, 杨再荣, 罗子江, 贺业全, 何浩, 韦俊, 邓朝勇, 丁召, 反射式高能电子衍射实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究, 物理学报, 60, 016109 (2011), (SCI)

  

63.Liang, Bei, Yang, Fa-shun, Ding, Zhao, Fu, Xing-hua, Simulation and Analysis of the Breakdown Mechanism and Characteristics of Super Junction Structure, IEEE International Conference on Electronics, Communications and Control(ICECC), 2011, 2011/9/9-2011/9/11, pp 467-470, Ningbo, PEOPLES R CHINA

  

64.贺业全, 罗子江, 杨再荣, 何浩, 邓朝勇, 周勋, 丁召, 不同Ⅴ/Ⅲ束流比对GaAs(001)面重构相的影响, 真空, 47, 70 (2010),

  

65.牛宗超, 杨发顺, 丁召, 王基石, 马奎, 张正平, 一种新型高精度CMOS带隙基准源的设计, 现代电子技术, (14), 7 (2010),

  

66.杨发顺, 马奎, 林洁馨, 丁召, 傅兴华, 双极型高精度大负载电流集成电压基准源设计, 半导体技术, 35, 598 (2010),

  

67.王基石, 宁江华, 丁召, 一种单片式CMOS汽车电子调节器, 现代电子技术, (09), 164 (2010),

  

68.王基石, 宁江华, 刘伟杰, 杨再荣, 周勋, 丁召, 700kHz/1.2MHz非调谐式振荡器, 现代机械, 7 , 50 (2010),

  

69.罗子江, 周勋, 杨再荣, 贺业全, 何浩, 邓朝勇, 丁召, RHEED实时监控下GaAs晶体生长研究, 功能材料, 41, 704 (2010), (EI)

  

70.牛宗超, 杨发顺, 吴宗桂, 丁召, 张正平, 一种新型的高电源抑制比带隙基准源的设计, 威尼斯在线平台学报(自然科学版), 27, 59 (2010),

  

71.宁江华, 王基石, 杨发顺, 丁召, 低压CMOS带隙基准电压源设计, 现代电子技术, (07), 115 (2010),

  

72.杨再荣, 周勋, 潘金福, 罗子江, 贺业全, 何浩, 丁召, MBE生长GaAs薄膜表面形貌的RHEED图样研究, 真空, 47, 31 (2010),

  

73.崔英善, 丁召, 张正平, 陆安江,砷化镓表面RHEED图谱的LabVIEW设计, 微计算机信息, 25, 99 (2009),

  

74.杨发顺, 林洁馨, 马奎, 丁召, 傅兴华, 汽车电压调节器集成电路芯片版图设计, 半导体技术, 34, 930 (2009),

  

75.杨发顺, 林洁馨, 马奎, 丁召, 傅兴华, 一种大电流高精度集成汽车电压调节器, 微电子学,39, 491 (2009),

  

76.黄旭, 潘金福, 王云, 周勋, 丁召, MBE系统中GaAs样品的RHEED分析, 现代机械, (03), 77 (2009),

  

77.潘金福, 王云, 黄旭, 丁召, 低温扫描隧道显微镜(LT-STM)的调试技术, 真空, 46, 57 (2009),

  

78.邓朝勇, 周勋, 马凯英, 张正平, 丁召, 傅兴华, 高浓度激活剂掺杂钡镁铝酸盐的发光特性研究, 中国稀土学报, 27, 194 (2009),

  

79.杨再荣, 潘金福, 周勋, 王基石, 宁江华, 丁召, 用于MBE中的反射式高能电子衍射仪, 现代机械, (01) , 57 (2009),

  

80.王云, 潘金福, 黄旭, 丁召, MBE系统中砷蒸气压的校准, 中国科技信息, (23) , 147 (2008),

  

81.潘金福, 黄旭, 王云, 丁召, STM探针电化学腐蚀装置的设计及实验研究, 现代机械, (05) , 14 (2008),

  

82.J. Yang, S. Wang, F.S. Yang, Z.P. Zhang, Z. Ding and X.H. Fu,In-situ growth of superconducting MgB2 thin films by HPCVD method at lower temperaturePhysica C 467,1 (2007)

83.J.F. Xu, P.M. Thibado, Z. Ding, 4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers, Rev. Sci. Instrum. 77, 093703 (2006) (SCI)

84.V.P. LaBella, M.R. Krause, Z. Ding and P.M. Thibado, Arsenic-rich GaAs(001) Surface Structure, Surf. Sci. Rep. 60, 1 (2005) (SCI)

85.Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella, Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001), J. Vac. Sci. Technol. B 22, 2068 (2004). (SCI)

86.S. Vezian, F. Semond, J. Massies, D. W. Bullock, Z. Ding and P. M. Thibado, Origins of the GaN(0001) Surface Reconstructions, Surf. Sci. 541, 242 (2003). (SCI)

87.Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Time-evolution of the GaAs(001) pre-roughening process, Surf. Sci. 540, 491 (2003). (SCI)

88.Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Atomic-Scale Observation of Temperature and Pressure Driven Preroughening and Roughenin, Phys. Rev. Lett. 90, 216109 (2003). (SCI)

89.D. W. Bullock,Z. Ding, and P. M. Thibado, V. P. LaBella, Role of Aperiodic Surface Defects on the Intensity of Electron Diffraction Spots, Appl. Phys. Lett. 82, 2586 (2003). (SCI)

90.Z. Ding, D. W. Bullock, W. F. Oliver and P. M. Thibado, Dynamics of Spontaneous Roughening on the GaAs (001)-(2 x 4) Surface, J. Cryst. Growth 251, 35 (2003). (SCI)

91.D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Simultaneous Surface Topography and Spin-Injection Probability, J. Vac. Sci. Technol. B, 21, 67 (2002). (SCI)

92.D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Mapping the Spin-Injection Probability on the Atomic Scale, J. Supercond. 15, 37 (2002). (SCI))

93.D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P. M. Thibado, Enhancing the Student-Instructor Interaction Frequency, The Physics Teacher, 40, 535 (2002). (SCI)

94.V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery and P. M. Thibado, Enabling Electron Diffraction as a Tool for Determining Substrate Temperature and Surface Morphology, App. Phys. Lett. 79, 3065 (2001) (SCI)

95.V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi, W. F. Oliver, G. J. Salamo, and P. M. Thibado, Spatially-Resolved Spin-Injection Probability for Gallium Arsenide, Science 292, 1518 (2001). (SCI)

96.V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, A Union of the Real Space and Reciprocal Space view of the GaAs(001) Surface, Int. J. Mod. Phys. B 15, 2301 (2001). (SCI)

97.V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, Microscopic Structure of Spontaneously Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, J. Vac. Sci. Technol. B 19, 1640 (2001). (SCI)

98.V. P. LaBella, D. W. Bullock, Z. Ding and P. M. Thibado, P. Kratzer and M. Scheffler, A Novel STM Imaging Mechanism is Used to Determine the Atomic Structure of the GaAs(001)-(2 x 4) Surface, Omicron Newsletter 4, 4 (2000).

99.V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstruction, J. Vac. Sci. Technol. A 18, 1492 (2000). (SCI)

100.V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, and P. M. Thibado, Monte-Carlo Derived Diffusion Parameters for Ga on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Vac. Sci. Technol. A 18, 1526 (2000). (SCI)

101.V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, and P. M. Thibado, Microscopic View of a Two-Dimensional Lattice-Gas Ising System within the Grand Canonical Ensemble, Phys. Rev. Lett. 84, 4152 (2000). (SCI)

102.H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers and P. M. Thibado, Activation Energy for Ga Diffusion on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Cryst. Growth 201-202, 88 (1999). (SCI)

  

103.J. B. Smathers, D.W. Bullock, Z. Ding, G.J. Salamo and P.M. Thibado, Enabling In Situ Atomic-Scale Characterization of Epitaxial Surfaces and Interfaces, J. Vac. Sci. Technol. B 16, 3112 (1998). (SCI)

会议报告

  

1.D. W. Bullock, V. P. LaBella, T. Clingan, Z. Ding, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 8th Hot Springs Educational Technology Institute Conference, June 13–14, 2001, Hot Springs, Arkansas.

2.C. Emery, D. W. Bullock, Z. Ding, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo, and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.

3.D. W. Bullock, C. Emery, Z. Ding, V. P. LaBella, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.

4.V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The Structure of Spontaneous Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.

5.V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, M. Mortazavi, G. Salamo and P. M. Thibado, Spatially-Resolved Spin-Injection Probabiliy for GaAs using a Half Metallic Ferromagnet, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.

6.V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The GaAs(001)-(2 x 4) Reconstructed Surface and the Ising Model, The 60th Annual Physical Electronics Conference, June 21–23, 2000, Baton Rouge, Louisiana.

7.D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 2000 Arkansas Space Grant Consortium Meeting, April 14, 2000, Russellville, Arkansas.

8.D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 84th Annual Meeting of the Arkansas Academy of Sciences, April 7–8, 2000, Hot Springs, Arkansas.

9.D. W. Bullock, Z. Ding, C. Emery, M. Filipkowsi, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Simultaneous Topography and Electron Spin-Injection Probability Across a p-Type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 16–20, 2000, Salt Lake City, Utah.

10.V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, Spontaneous Island Formation on the GaAs(001)-(2 x 4) Reconstructed Surface, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 1620, 2000, Salt Lake City, Utah.

11.Z. Ding, V. P. LaBella, D. W. Bullock, P. M. Thibado, The Surface Reconstructions of InP(001), 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.

12.P. M. Thibado, V. P. LaBella, M. Anser, Z. Ding, D. W. Bullock, Spontaneous Island Formation on the GaAs(001)( 2 x 4) Reconstructed Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.

13.D.W. Bullock, V.P. LaBella, Z. Ding, and P.M. Thibado, The Effect of As4 Flux on the Ga Diffusion on the GaAs(001)-(2 x 4) Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington

14.Z. Ding, H. Yang, D. W. Bullock, P. Thibado, The Surface Reconstructions of InP, 1999 March Meeting of the American Physical Society, March 20–26, 1999, Atlanta Georgia.

15.P. M. Thibado, H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers,In Situ Study of Ga Diffusion on the GaAs(001)-(2 x 4) Surface Reconstruction, 10 th International Conference on Molecular Beam Epitaxy, August 31 – September 4, 1998, Palais Des Festivals - Cannes, France.

16.Z. Ding, P. M. Thibado and V. P. Labella, E-beam evaporated cobalt films on MBE prepared GaAs(001) for spintronice, PCSI-31st Cneference on The Physics and Chemistry of Semiconductor Interfaces, January 18-22, 2004, Hawaii, U. S. A.

17.“超微粒SnO2薄膜的制备”,1991年全国薄膜科学技术年会,北京

18.“超微粒SnO2薄膜型高灵敏度氢气传感器”,1995年全国传感器学术年会,上海

  

特邀报告

  

Z. Ding, Developing a Spin-Polarized Field-Effect Transistor and Measuring its Performance Characteristics, Nov. 5, 2004; Physics Department, University of Arkansas, Fayetteville, Arkansas, U. S. A.

授权的国家专利:

1.一种用于制作探针的压电陶瓷举升液膜机构ZL2017 2 0460023.X 丁召,许筱晓

2.一种垂直固定探针棒的联接结构,ZL2017 2 044278.2 丁召,许筱晓

3.一种用于制作探针的电磁举升液膜机构,ZL2017 2 0460024.4 丁召,许筱晓

4.一种制作扫描隧道显微镜探针设备的探针棒减振装置,ZL2017 2 0304029.8 丁召,许筱晓

5.基于电化学反应样品在光照条件下单面被腐蚀的实验装置,ZL2016 2 0436943.3,丁召 刘健

6.一种实现在电化学通路中样品部分腐蚀的实验装置,ZL2015 2 1090403.6 丁召 刘健 郭祥 王一 赵振 周海月

7.一种基于扫描隧道显微镜的样品定位装置,ZL2015 2 0059154.8,丁召,周海月,赵振,刘健,郭祥,王一,魏文喆,黄梦雅,罗子江

8.一种制备扫描隧道显微镜纯钨探针的装置,ZL2013 2 0008970.7,丁召,王一,魏文喆,周清,黄梦雅,罗子江,郭祥

9.一种扫描隧道显微镜的纯金属探针的修饰装置,ZL2013 2 0609968.5,丁召,魏文喆,郭祥,王一,黄梦雅,罗子江,王继红,周海月

奖励或荣誉:

1.贵州省省管专家

2.威尼斯在线平台学科学术带头人

3.“半导体器件原理课程教学改革的探讨与实践”贵州省第五届高等教育教学成果奖一等奖,傅兴华,丁召,杨建,罗援,2001


 
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